1 4 - ELM33413CA-S general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 75 100 c/w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 12 v continuous drain current ta=25c id -4.0 a ta=70c -3.0 pulsed drain current idm -20 a 3 power dissipation ta=25c pd 1.25 w ta=70c 0.80 junction and storage temperature range tj, tstg -55 to 150 c ELM33413CA-S uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-4a ? rds(on) < 64m (vgs=-4.5v) ? rds(on) < 80m (vgs=-2.5v) ? rds(on) < 120m (vgs=-1.8v) single p-channel mosfet pin configuration circuit s g d pin no. pin name 1 gate 2 source 3 drain sot-23(top view) 1 2 3
2 4 - ELM33413CA-S single p-channel mosfet electrical characteristics ta=25c parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss vgs=0v, id=-250a -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v, vgs= 0v, tj=125c -10 gate-body leakage current igss vds=0v, vgs= 12v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.45 -0.80 -1.20 v on state drain current id(on) vgs=-4.5v, vds=-5v -20 a 1 static drain-source on-resistance rds(on) vgs=-4.5v, id=- 4a 55 64 m 1 vgs=-2.5v, id=-3a 62 80 m vgs=-1.8v, id=-2a 90 120 m forward transconductance gfs vds=-5v, id=-4a 12 s 1 diode forward voltage vsd is=-1a, vgs=0v -1.2 v 1 max. body-diode continuous current is -1.6 a pulsed body-diode current ism -3 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 950 pf output capacitance coss 115 pf reverse transfer capacitance crss 75 pf switching parameters total gate charge qg vgs=-4.5v, vds=-15v id=-4a 9.4 nc 2 gate-source charge qgs 2.0 nc 2 gate-drain charge qgd 3.0 nc 2 turn - on delay time td(on) vgs=-4.5v, vds=-10v id-1a, rgen=6 6.3 ns 2 turn - on rise time tr 3.2 ns 2 turn - off delay time td(off) 38.0 ns 2 turn - off fall time tf 12.0 ns 2 note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 4 - typical electrical and thermal characteristics ELM33413CA-S single p-channel mosfet p-channel logic level enhancement mode field effect transistor p6403fmg sot-23 lead-free niko-sem 3 jul-20-2006 typical electrical characteristics 15 12 9 6 3 0 0 1 2 3 4 v gs = -4.5v -3.0v -2.5v -1.5v -v gs , drain to source voltage(v) on-region characteristics. i d , drain current(a) -3.5v -2.0v 2 1.8 1.6 1.4 1.2 1 0.8 0 3 6 9 12 15 v gs = -2.0v -2.5v -3.0v -3.5v -4.5v -i d , drain current(a) on-resistance variation with drain current and gate voltage. r ds(on) , normrlized drain-source on-resistance 0.7 -50 -25 0 25 50 75 100 125 150 t j , junction temperature(c) r ds(on) , normalized drain-source on-resistance i d = -4a v gs = -4.5v on-resistance variation with temperature. 0.8 0.9 1.2 1.1 1 1.3 1.4 0.22 0.18 0.1 0.14 0.06 0.02 1 2 3 4 5 -v gs , gate to source voltage(v) on-resistance variation with gate-to-source voltage. i d = -2a t a = 125 c t a = 25 c r ds(on) , on-resistance( ? ) 0 2 4 6 8 10 2.5 2 1.5 1 0.5 v gs , gate to source voltage(v) i d , drain current(a) v ds = -5v t a = -55 c 125 c 25 c transfer characteristics. 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 body diode forword voltage variation with source current and temperature. i s , reverse drain current (a) v gs = 0v t a = 125 c 25 c -55 c v sd , body diode forward voltage(v)
4 4 - ELM33413CA-S single p-channel mosfet p-channel logic level enhancement mode field effect transistor p6403fmg sot-23 lead-free niko-sem 4 jul-20-2006 maxmum safe operating area. -v ds ,drain-source voltage(v) i d ,drain current(a) v gs =-10v single pulse r ? ja =100 c/w ta=25 c dc 1s 100ms 10ms 100 ? s limit r ds(on) 100 10 1 0.1 0.01 100 10 1 0.1 1ms r ? ja (t) = r(t) * r ??? r ? ja =100c/w duty cycle, d= t 1 / t 2 t j -t a =p*r ? ja (t) t2 t1 p(pk) transisent thermal response curve. t1 time(sec) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 300 100 10 1 0.1 0.01 0.001 0.0001 0.001 single pulse r ? ja =100c/w t a =25c power(w) single pulse maximum power dissipation. single pulse time(sec) 100 10 1 0.1 0.01 0.001 0 10 20 30 40 50 5 4 3 2 1 0 0 2 4 6 8 10 i d = -4a -v gs, gate-source voltage (v) q g gate charge(nc) gate-charge ch aracteristics 12 v ds = -10v -15v 1400 400 200 0 0 5 30 capacitance(pf) c rss c oss c iss capacitance ch aracteristics 600 1000 1200 10 15 20 f = 1mhz v gs = 0 v 800 25 -v ds , drain to source voltage (v)
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